Abstract

In this study, we report our new finding of bipolar resistance effect (BRE) in quantum dots (QDs)-embedded structure of Zn/CdSe/Si. This effect features a remarkable linear resistance change and an enhanced BRE when a laser moves along the surface of the structure. The results show that the combination of BRE with QDs is useful for applications and may add a new functionality to QDs-based optoelectronic devices.

© 2012 Optical Society of America

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