Abstract
The effect of triangular air prism (TAP) arrays with different distance-to-width () ratios on the enhancement of light extraction efficiency (LEE) of InGaN light-emitting diodes (LEDs) is investigated. The TAP arrays embedded at the sapphire/GaN interface act as light reflectors and refractors, and thereby improve the light output power due to the redirection of light into escape cones on both the front and back sides of the LED. Enhancement in radiometric power as high as 117% and far-field angle as low as 129° are realized with a compact arrangement of TAP arrays compared with that of a conventional LED made without TAP arrays under an injection current of 20 mA.
©2012 Optical Society of America
Full Article | PDF ArticleMore Like This
Jae Hyoung Ryu, Hee Yun Kim, Hyun Kyu Kim, Yashpal Singh Katharria, Nam Han, Ji Hye Kang, Young Jae Park, Min Han, Beo Deul Ryu, Kang Bok Ko, Eun-Kyoung Suh, and Chang-Hee Hong
Opt. Express 20(9) 9999-10003 (2012)
Hyun Kyu Kim, Young Jae Park, Ji Hye Kang, Nam Han, Min Han, Beo Deul Ryu, Kang Bok Ko, Jong Han Yang, Young Taek Kim, S. Chandramohan, Hyun Jeong, Mun Seok Jeong, and Chang-Hee Hong
Opt. Lett. 38(9) 1491-1493 (2013)
Young Jae Park, Hee Yun Kim, Jae Hyoung Ryu, Hyun Kyu Kim, Ji Hye Kang, Nam Han, Min Han, Hyun Jeong, Mun Seok Jeong, and Chang-Hee Hong
Opt. Express 19(3) 2029-2036 (2011)