Abstract
A Raman laser based on a bulk silicon single crystal with emission wavelength is demonstrated. The Si crystal with length was placed into an external cavity and pumped by a Q-switched Nd:YAG master oscillator power amplifier system. Strong defocusing of the pump and Raman laser beam by free carriers was compensated by an intracavity lens. Raman laser operation with a pulse duration of was identified by a Raman laser threshold significantly lower than the single-pass stimulated Raman-scattering threshold. Linear absorption losses of the pump radiation are strongly reduced by cooling the Si crystal to a temperature of .
© 2011 Optical Society of America
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