Fabrication and characterization of silicon antireflection structures for infrared rays using a femtosecond laser

Abstract

We focus on IR sensors with lower reflection for the wavelength around $10\mathrm{\mu m}$, strongly awaited for detecting human bodies. A concave structure was designed as a more suitable reflection-free structure for IR light, and an optical system with a femtosecond laser was employed for verification of the effectiveness of the structure. The microstructures prepared through this process were fabricated and optically measured using SEM, FT-IR, and Raman spectroscopy. The measurement revealed that good reflection-free structures were realized for IR sensors with lower reflection for the wavelength of around $10\mathrm{\mu m}$.

© 2011 Optical Society of America

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