Abstract

We demonstrate an optically pumped semiconductor disk laser based on the (AlGaIn)(AsSb) material system, which operates at an emission wavelength of 2.8μm. Up to 120mW of output power were obtained in cw operation and more than 500mW in pulsed mode. The performance of the present laser is discussed in comparison to shorter-wavelength semiconductor disk lasers based on the same materials system.

© 2011 Optical Society of America

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  1. N. Schulz, J.-M. Hopkins, M. Rattunde, D. Burns, and J. Wagner, Laser Photon. Rev. 2, 160 (2008).
    [CrossRef]
  2. M. Rattunde, J. Schmitz, G. Kaufel, M. Kelemen, J. Weber, and J. Wagner, Appl. Phys. Lett. 88, 081115 (2006).
    [CrossRef]
  3. L. Shterengas, G. Kipshidze, T. Hosoda, J. Chen, and G. Belenky, Electron. Lett. 45, 942 (2009).
    [CrossRef]
  4. T. Hosoda, G. Kipshidze, L. Shterengas, and G. Belenky, Electron. Lett. 46, 1455 (2010).
    [CrossRef]
  5. A. Bachmann, T. Lim, K. Kashani-Shirazi, O. Dier, C. Lauer, and M.-C. Amann, Electron. Lett. 44, 202 (2008).
    [CrossRef]
  6. D. Faucher, M. Bernier, N. Caron, and R. Vallée, Opt. Lett. 34, 3313 (2009).
    [CrossRef] [PubMed]
  7. M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, IEEE J. Sel. Top. Quantum Electron. 5, 561 (1999).
    [CrossRef]
  8. L. Shterengas, G. L. Belenky, J. G. Kim, and R. U. Martinelli, Semicond. Sci. Technol. 19, 655 (2004).
    [CrossRef]
  9. Z. L. Liau, Appl. Phys. Lett. 77, 651 (2000).
    [CrossRef]
  10. B. Rösener, N. Schulz, M. Rattunde, C. Manz, K. Köhler, and J. Wagner, IEEE Photonics Technol. Lett. 21, 848 (2009).
    [CrossRef]
  11. M. Grau, C. Lin, O. Dier, C. Lauer, and M.-C. Amann, Appl. Phys. Lett. 87, 241104 (2005).
    [CrossRef]

2010 (1)

T. Hosoda, G. Kipshidze, L. Shterengas, and G. Belenky, Electron. Lett. 46, 1455 (2010).
[CrossRef]

2009 (3)

D. Faucher, M. Bernier, N. Caron, and R. Vallée, Opt. Lett. 34, 3313 (2009).
[CrossRef] [PubMed]

B. Rösener, N. Schulz, M. Rattunde, C. Manz, K. Köhler, and J. Wagner, IEEE Photonics Technol. Lett. 21, 848 (2009).
[CrossRef]

L. Shterengas, G. Kipshidze, T. Hosoda, J. Chen, and G. Belenky, Electron. Lett. 45, 942 (2009).
[CrossRef]

2008 (2)

A. Bachmann, T. Lim, K. Kashani-Shirazi, O. Dier, C. Lauer, and M.-C. Amann, Electron. Lett. 44, 202 (2008).
[CrossRef]

N. Schulz, J.-M. Hopkins, M. Rattunde, D. Burns, and J. Wagner, Laser Photon. Rev. 2, 160 (2008).
[CrossRef]

2006 (1)

M. Rattunde, J. Schmitz, G. Kaufel, M. Kelemen, J. Weber, and J. Wagner, Appl. Phys. Lett. 88, 081115 (2006).
[CrossRef]

2005 (1)

M. Grau, C. Lin, O. Dier, C. Lauer, and M.-C. Amann, Appl. Phys. Lett. 87, 241104 (2005).
[CrossRef]

2004 (1)

L. Shterengas, G. L. Belenky, J. G. Kim, and R. U. Martinelli, Semicond. Sci. Technol. 19, 655 (2004).
[CrossRef]

2000 (1)

Z. L. Liau, Appl. Phys. Lett. 77, 651 (2000).
[CrossRef]

1999 (1)

M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, IEEE J. Sel. Top. Quantum Electron. 5, 561 (1999).
[CrossRef]

Amann, M.-C.

A. Bachmann, T. Lim, K. Kashani-Shirazi, O. Dier, C. Lauer, and M.-C. Amann, Electron. Lett. 44, 202 (2008).
[CrossRef]

M. Grau, C. Lin, O. Dier, C. Lauer, and M.-C. Amann, Appl. Phys. Lett. 87, 241104 (2005).
[CrossRef]

Bachmann, A.

A. Bachmann, T. Lim, K. Kashani-Shirazi, O. Dier, C. Lauer, and M.-C. Amann, Electron. Lett. 44, 202 (2008).
[CrossRef]

Belenky, G.

T. Hosoda, G. Kipshidze, L. Shterengas, and G. Belenky, Electron. Lett. 46, 1455 (2010).
[CrossRef]

L. Shterengas, G. Kipshidze, T. Hosoda, J. Chen, and G. Belenky, Electron. Lett. 45, 942 (2009).
[CrossRef]

Belenky, G. L.

L. Shterengas, G. L. Belenky, J. G. Kim, and R. U. Martinelli, Semicond. Sci. Technol. 19, 655 (2004).
[CrossRef]

Bernier, M.

Burns, D.

N. Schulz, J.-M. Hopkins, M. Rattunde, D. Burns, and J. Wagner, Laser Photon. Rev. 2, 160 (2008).
[CrossRef]

Caron, N.

Chen, J.

L. Shterengas, G. Kipshidze, T. Hosoda, J. Chen, and G. Belenky, Electron. Lett. 45, 942 (2009).
[CrossRef]

Dier, O.

A. Bachmann, T. Lim, K. Kashani-Shirazi, O. Dier, C. Lauer, and M.-C. Amann, Electron. Lett. 44, 202 (2008).
[CrossRef]

M. Grau, C. Lin, O. Dier, C. Lauer, and M.-C. Amann, Appl. Phys. Lett. 87, 241104 (2005).
[CrossRef]

Faucher, D.

Grau, M.

M. Grau, C. Lin, O. Dier, C. Lauer, and M.-C. Amann, Appl. Phys. Lett. 87, 241104 (2005).
[CrossRef]

Hakimi, F.

M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, IEEE J. Sel. Top. Quantum Electron. 5, 561 (1999).
[CrossRef]

Hopkins, J.-M.

N. Schulz, J.-M. Hopkins, M. Rattunde, D. Burns, and J. Wagner, Laser Photon. Rev. 2, 160 (2008).
[CrossRef]

Hosoda, T.

T. Hosoda, G. Kipshidze, L. Shterengas, and G. Belenky, Electron. Lett. 46, 1455 (2010).
[CrossRef]

L. Shterengas, G. Kipshidze, T. Hosoda, J. Chen, and G. Belenky, Electron. Lett. 45, 942 (2009).
[CrossRef]

Kashani-Shirazi, K.

A. Bachmann, T. Lim, K. Kashani-Shirazi, O. Dier, C. Lauer, and M.-C. Amann, Electron. Lett. 44, 202 (2008).
[CrossRef]

Kaufel, G.

M. Rattunde, J. Schmitz, G. Kaufel, M. Kelemen, J. Weber, and J. Wagner, Appl. Phys. Lett. 88, 081115 (2006).
[CrossRef]

Kelemen, M.

M. Rattunde, J. Schmitz, G. Kaufel, M. Kelemen, J. Weber, and J. Wagner, Appl. Phys. Lett. 88, 081115 (2006).
[CrossRef]

Kim, J. G.

L. Shterengas, G. L. Belenky, J. G. Kim, and R. U. Martinelli, Semicond. Sci. Technol. 19, 655 (2004).
[CrossRef]

Kipshidze, G.

T. Hosoda, G. Kipshidze, L. Shterengas, and G. Belenky, Electron. Lett. 46, 1455 (2010).
[CrossRef]

L. Shterengas, G. Kipshidze, T. Hosoda, J. Chen, and G. Belenky, Electron. Lett. 45, 942 (2009).
[CrossRef]

Köhler, K.

B. Rösener, N. Schulz, M. Rattunde, C. Manz, K. Köhler, and J. Wagner, IEEE Photonics Technol. Lett. 21, 848 (2009).
[CrossRef]

Kuznetsov, M.

M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, IEEE J. Sel. Top. Quantum Electron. 5, 561 (1999).
[CrossRef]

Lauer, C.

A. Bachmann, T. Lim, K. Kashani-Shirazi, O. Dier, C. Lauer, and M.-C. Amann, Electron. Lett. 44, 202 (2008).
[CrossRef]

Lauer, C.

M. Grau, C. Lin, O. Dier, C. Lauer, and M.-C. Amann, Appl. Phys. Lett. 87, 241104 (2005).
[CrossRef]

Liau, Z. L.

Z. L. Liau, Appl. Phys. Lett. 77, 651 (2000).
[CrossRef]

Lim, T.

A. Bachmann, T. Lim, K. Kashani-Shirazi, O. Dier, C. Lauer, and M.-C. Amann, Electron. Lett. 44, 202 (2008).
[CrossRef]

Lin, C.

M. Grau, C. Lin, O. Dier, C. Lauer, and M.-C. Amann, Appl. Phys. Lett. 87, 241104 (2005).
[CrossRef]

Manz, C.

B. Rösener, N. Schulz, M. Rattunde, C. Manz, K. Köhler, and J. Wagner, IEEE Photonics Technol. Lett. 21, 848 (2009).
[CrossRef]

Martinelli, R. U.

L. Shterengas, G. L. Belenky, J. G. Kim, and R. U. Martinelli, Semicond. Sci. Technol. 19, 655 (2004).
[CrossRef]

Mooradian, A.

M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, IEEE J. Sel. Top. Quantum Electron. 5, 561 (1999).
[CrossRef]

Rattunde, M.

B. Rösener, N. Schulz, M. Rattunde, C. Manz, K. Köhler, and J. Wagner, IEEE Photonics Technol. Lett. 21, 848 (2009).
[CrossRef]

N. Schulz, J.-M. Hopkins, M. Rattunde, D. Burns, and J. Wagner, Laser Photon. Rev. 2, 160 (2008).
[CrossRef]

M. Rattunde, J. Schmitz, G. Kaufel, M. Kelemen, J. Weber, and J. Wagner, Appl. Phys. Lett. 88, 081115 (2006).
[CrossRef]

Rösener, B.

B. Rösener, N. Schulz, M. Rattunde, C. Manz, K. Köhler, and J. Wagner, IEEE Photonics Technol. Lett. 21, 848 (2009).
[CrossRef]

Schmitz, J.

M. Rattunde, J. Schmitz, G. Kaufel, M. Kelemen, J. Weber, and J. Wagner, Appl. Phys. Lett. 88, 081115 (2006).
[CrossRef]

Schulz, N.

B. Rösener, N. Schulz, M. Rattunde, C. Manz, K. Köhler, and J. Wagner, IEEE Photonics Technol. Lett. 21, 848 (2009).
[CrossRef]

N. Schulz, J.-M. Hopkins, M. Rattunde, D. Burns, and J. Wagner, Laser Photon. Rev. 2, 160 (2008).
[CrossRef]

Shterengas, L.

T. Hosoda, G. Kipshidze, L. Shterengas, and G. Belenky, Electron. Lett. 46, 1455 (2010).
[CrossRef]

L. Shterengas, G. Kipshidze, T. Hosoda, J. Chen, and G. Belenky, Electron. Lett. 45, 942 (2009).
[CrossRef]

L. Shterengas, G. L. Belenky, J. G. Kim, and R. U. Martinelli, Semicond. Sci. Technol. 19, 655 (2004).
[CrossRef]

Sprague, R.

M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, IEEE J. Sel. Top. Quantum Electron. 5, 561 (1999).
[CrossRef]

Vallée, R.

Wagner, J.

B. Rösener, N. Schulz, M. Rattunde, C. Manz, K. Köhler, and J. Wagner, IEEE Photonics Technol. Lett. 21, 848 (2009).
[CrossRef]

N. Schulz, J.-M. Hopkins, M. Rattunde, D. Burns, and J. Wagner, Laser Photon. Rev. 2, 160 (2008).
[CrossRef]

M. Rattunde, J. Schmitz, G. Kaufel, M. Kelemen, J. Weber, and J. Wagner, Appl. Phys. Lett. 88, 081115 (2006).
[CrossRef]

Weber, J.

M. Rattunde, J. Schmitz, G. Kaufel, M. Kelemen, J. Weber, and J. Wagner, Appl. Phys. Lett. 88, 081115 (2006).
[CrossRef]

Appl. Phys. Lett. (3)

M. Rattunde, J. Schmitz, G. Kaufel, M. Kelemen, J. Weber, and J. Wagner, Appl. Phys. Lett. 88, 081115 (2006).
[CrossRef]

Z. L. Liau, Appl. Phys. Lett. 77, 651 (2000).
[CrossRef]

M. Grau, C. Lin, O. Dier, C. Lauer, and M.-C. Amann, Appl. Phys. Lett. 87, 241104 (2005).
[CrossRef]

Electron. Lett. (3)

L. Shterengas, G. Kipshidze, T. Hosoda, J. Chen, and G. Belenky, Electron. Lett. 45, 942 (2009).
[CrossRef]

T. Hosoda, G. Kipshidze, L. Shterengas, and G. Belenky, Electron. Lett. 46, 1455 (2010).
[CrossRef]

A. Bachmann, T. Lim, K. Kashani-Shirazi, O. Dier, C. Lauer, and M.-C. Amann, Electron. Lett. 44, 202 (2008).
[CrossRef]

IEEE J. Sel. Top. Quantum Electron. (1)

M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, IEEE J. Sel. Top. Quantum Electron. 5, 561 (1999).
[CrossRef]

IEEE Photonics Technol. Lett. (1)

B. Rösener, N. Schulz, M. Rattunde, C. Manz, K. Köhler, and J. Wagner, IEEE Photonics Technol. Lett. 21, 848 (2009).
[CrossRef]

Laser Photon. Rev. (1)

N. Schulz, J.-M. Hopkins, M. Rattunde, D. Burns, and J. Wagner, Laser Photon. Rev. 2, 160 (2008).
[CrossRef]

Opt. Lett. (1)

Semicond. Sci. Technol. (1)

L. Shterengas, G. L. Belenky, J. G. Kim, and R. U. Martinelli, Semicond. Sci. Technol. 19, 655 (2004).
[CrossRef]

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Figures (3)

Fig. 1
Fig. 1

Lower graph, band-edge profile of the active region; upper graph, internal standing-wave pattern at the laser wavelength. QWs are arranged in groups at the positions of the antinodes. The number of QWs per antinode decreases toward the DBR. This design takes into account that the pump intensity decreases exponentially with growing distance to the chip surface.

Fig. 2
Fig. 2

Output power versus absorbed pump power in pulsed and cw operation at 20 °C heat sink temperature. The inset shows a spectrum recorded in cw operation at 20 °C .

Fig. 3
Fig. 3

Slope efficiency and absorbed pump power at threshold depending on the heat sink temperature (all data measured in pulsed-mode operation). Fitting an exponential function to the efficiency data yielded a characteristic temperature of T 1 = 71 K .

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