Abstract

We report on the antireflective characteristics of porous silicon (Si) nanocolumnar structures consisting of graded refractive index layers and carry out a rigorous coupled-wave analysis simulation. The refractive index of Si is gradually modified by a tilted angle electron beam evaporation method. For the fabricated Si nanostructure with a Gaussian index profile of 100nm, reflectivity (R) of less than 7.5% is obtained with an average value of approximately 2.9% at the wavelength region of 400800nm. The experimental results are reasonably consistent with the simulated results for the design of antireflective Si nanostructures.

© 2011 Optical Society of America

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