Antireflective properties of porous Si nanocolumnar structures with graded refractive index layers

Sung Jun Jang; Young Min Song; Jae Su Yu; Chan Il Yeo; Yong Tak Lee

doi:10.1364/OL.36.000253

Optics Letters
Vol. 36,
Issue 2,
pp. 253-255
(2011)
•https://doi.org/10.1364/OL.36.000253

Antireflective properties of porous Si nanocolumnar structures with graded refractive index layers

Sung Jun Jang, Young Min Song, Jae Su Yu, Chan Il Yeo, and Yong Tak Lee

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Sung Jun Jang, Young Min Song, Jae Su Yu, Chan Il Yeo, and Yong Tak Lee, "Antireflective properties of porous Si nanocolumnar structures with graded refractive index layers," Opt. Lett. 36, 253-255 (2011)

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Abstract

We report on the antireflective characteristics of porous silicon (Si) nanocolumnar structures consisting of graded refractive index layers and carry out a rigorous coupled-wave analysis simulation. The refractive index of Si is gradually modified by a tilted angle electron beam evaporation method. For the fabricated Si nanostructure with a Gaussian index profile of $100 nm$ , reflectivity (R) of less than 7.5% is obtained with an average value of approximately 2.9% at the wavelength region of $400 - 800 nm$ . The experimental results are reasonably consistent with the simulated results for the design of antireflective Si nanostructures.

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Layer Number	$θ_{tilt}$	n (at $633 nm$ )	$t_{linear}$ ( $100 nm$ )	$t_{quintic}$ ( $100 nm$ )	$t_{Gaussian}$ ( $100 nm$ )	$t_{Gaussian}$ ( $200 nm$ )
1	$70 °$	1.65	$15 nm$	$29 nm$	$44.8 nm$	$89.6 nm$
2	$55 °$	1.96	$27.6 nm$	$17.2 nm$	$18.2 nm$	$36.4 nm$
3	$40 °$	2.41	$30.8 nm$	$17 nm$	$14.8 nm$	$29.6 nm$
4	$0 °$	2.85	$26.8 nm$	$37 nm$	$22.4 nm$	$44.8 nm$

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