Abstract

We have developed a multilayer mirror for extreme UV (EUV) radiation ($13.5\mathrm{nm}$), which has near-zero reflectance for IR line radiation ($10.6\mathrm{\mu m}$). The EUV reflecting multilayer is based on alternating ${\mathrm{B}}_4\mathrm{C}$ and Si layers. Substantial transparency of these materials with respect to the IR radiation allowed the integration of the multilayer coating in a resonant quarter-wave structure for $10.6\mathrm{\mu m}$. Samples were manufactured using magnetron sputtering deposition technique and demonstrated suppression of the IR radiation by up to 3 orders of magnitude. The EUV peak reflectance amounts 45% at $13.5\mathrm{nm}$, with a bandwidth at FWHM being $0.284\mathrm{nm}$. Therefore such a mirror could replace conventional multilayer mirrors to suppress undesired spectral components in monochromatic imaging applications, including EUV photolithography.

© 2011 Optical Society of America

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