Abstract

We have designed and analyzed a novel (to the best of our knowledge) two-beam interference lithography system for large-area (wafer-level) nanopatterning with enhanced tunability of pattern periodicities. The tunable feature has been achieved by placing two rotational mirrors in the expanded beam paths at regulated angles for a desired period. Theoretical analyses show that the effective pattern coverage area greater than a 4in. (10cm) wafer scale is attainable with a 325nm (30cm coherence length) HeCd laser and 4in. (10cm) mirrors, while the pattern coverage area is restrained by the overruling effects between the optical coherence and mirror size. The experimental results also demonstrate uniform nanopatterns at varying periods (250750nm) on 4in. (10cm) substrates, validating the theoretical analyses. The tunable two-mirror interferometer will offer a convenient and robust way to prepare large-area nanostructures on a wafer scale with superior tunability in their pattern periodicities.

© 2011 Optical Society of America

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