Waveguide-integrated telecom-wavelength photodiode in deposited silicon

Abstract

We demonstrate photodiodes in deposited polycrystalline silicon at $1550\mathrm{nm}$ wavelength with $0.15\mathrm{A}/\mathrm{W}$ responsivity, $40\mathrm{nA}$ dark current, and gigahertz time response. Subband absorption is mediated by defects that are naturally present in the polycrystalline material structure. The material exhibits a moderate absorption coefficient of $6\mathrm{dB}/\mathrm{cm}$, which allows the same microring resonator device to act as both a demultiplexing filter and a photodetector. We discuss the use of deposited silicon-based complementary metal-oxide semiconductor materials for nanophotonic interconnects.

© 2010 Optical Society of America

Polycrystalline silicon ring resonator photodiodes in a bulk complementary metal-oxide-semiconductor process

Karan K. Mehta, Jason S. Orcutt, Jeffrey M. Shainline, Ofer Tehar-Zahav, Zvi Sternberg, Roy Meade, Miloš A. Popović, and Rajeev J. Ram
Opt. Lett. 39(4) 1061-1064 (2014)

Silicon photonic resonator-enhanced defect-mediated photodiode for sub-bandgap detection

J. K. Doylend, P. E. Jessop, and A. P. Knights
Opt. Express 18(14) 14671-14678 (2010)

Deposited silicon high-speed integrated electro-optic modulator

Kyle Preston, Sasikanth Manipatruni, Alexander Gondarenko, Carl B. Poitras, and Michal Lipson
Opt. Express 17(7) 5118-5124 (2009)

Integrated waveguide PIN photodiodes exploiting lateral Si/Ge/Si heterojunction

Léopold Virot, Daniel Benedikovic, Bertrand Szelag, Carlos Alonso-Ramos, Bayram Karakus, Jean-Michel Hartmann, Xavier Le Roux, Paul Crozat, Eric Cassan, Delphine Marris-Morini, Charles Baudot, Frédéric Boeuf, Jean-Marc Fédéli, Christophe Kopp, and Laurent Vivien
Opt. Express 25(16) 19487-19496 (2017)

InGaAs PIN photodetectors integrated on silicon-on-insulator waveguides

Zhen Sheng, Liu Liu, Joost Brouckaert, Sailing He, and Dries Van Thourhout
Opt. Express 18(2) 1756-1761 (2010)