Abstract

We demonstrate photodiodes in deposited polycrystalline silicon at 1550nm wavelength with 0.15A/W responsivity, 40nA dark current, and gigahertz time response. Subband absorption is mediated by defects that are naturally present in the polycrystalline material structure. The material exhibits a moderate absorption coefficient of 6dB/cm, which allows the same microring resonator device to act as both a demultiplexing filter and a photodetector. We discuss the use of deposited silicon-based complementary metal-oxide semiconductor materials for nanophotonic interconnects.

© 2010 Optical Society of America

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