Abstract

We present ultrawide flat-band reflectors enabled with multilevel resonant leaky-mode structures. The reflectors are designed using particle swarm optimization. We show that three-level silicon-on-insulator structures provide bandwidths of 840nm for TE polarization and 835nm for TM polarization, across which reflectance is greater than 99% and 97.5%, respectively. For the germanium-on-insulator system, the 99% TE and TM bandwidths are 1100nm and 1050nm. The results indicate the potential of multilevel resonant leaky-mode elements in electromagnetics and photonics.

© 2010 Optical Society of America

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  2. L. Mashev and E. Popov, Opt. Commun. 55, 377 (1985).
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2008 (2)

2007 (1)

2004 (3)

Y. Ding and R. Magnusson, Opt. Express 12, 5661 (2004).
[CrossRef] [PubMed]

C. F. R. Mateus, M. C. Y. Huang, Y. Deng, A. R. Neureuther, and C. J. Chang-Hasnain, IEEE Photon. Technol. Lett. 16, 518 (2004).
[CrossRef]

C. F. R. Mateus, M. C. Y. Huang, L. Chen, C. J. Chang-Hasnain, and Y. Suzuki, IEEE Photon. Technol. Lett. 16, 1676 (2004).
[CrossRef]

2003 (1)

R. Magnusson, Y. Ding, K. J. Lee, D. Shin, P. S. Priambodo, P. P. Young, and T. A. Maldonado, Proc. SPIE 5225, 20 (2003).
[CrossRef]

1995 (2)

M. G. Moharam, D. A. Pommet, E. B. Grann, and T. K. Gaylord, J. Opt. Soc. Am. A 12, 1077 (1995).
[CrossRef]

R. Eberhart and J. Kennedy, in Proceedings of IEEE Conference on Neural Networks (IEEE, 1995), pp. 1948.

1993 (1)

1989 (1)

I. A. Avrutsky and V. A. Sychugov, J. Mod. Opt. 36, 1527 (1989).
[CrossRef]

1985 (2)

G. A. Golubenko, A. S. Svakhin, V. A. Sychugov, and A. V. Tishchenko, Sov. J. Quantum Electron. 15, 886 (1985).
[CrossRef]

L. Mashev and E. Popov, Opt. Commun. 55, 377 (1985).
[CrossRef]

1979 (1)

P. Vincent and M. Neviere, Appl. Phys. 20, 345 (1979).
[CrossRef]

Avrutsky, I. A.

I. A. Avrutsky and V. A. Sychugov, J. Mod. Opt. 36, 1527 (1989).
[CrossRef]

Chang-Hasnain, C. J.

C. F. R. Mateus, M. C. Y. Huang, Y. Deng, A. R. Neureuther, and C. J. Chang-Hasnain, IEEE Photon. Technol. Lett. 16, 518 (2004).
[CrossRef]

C. F. R. Mateus, M. C. Y. Huang, L. Chen, C. J. Chang-Hasnain, and Y. Suzuki, IEEE Photon. Technol. Lett. 16, 1676 (2004).
[CrossRef]

Chen, L.

C. F. R. Mateus, M. C. Y. Huang, L. Chen, C. J. Chang-Hasnain, and Y. Suzuki, IEEE Photon. Technol. Lett. 16, 1676 (2004).
[CrossRef]

Deng, Y.

C. F. R. Mateus, M. C. Y. Huang, Y. Deng, A. R. Neureuther, and C. J. Chang-Hasnain, IEEE Photon. Technol. Lett. 16, 518 (2004).
[CrossRef]

Ding, Y.

Y. Ding and R. Magnusson, Opt. Express 12, 5661 (2004).
[CrossRef] [PubMed]

R. Magnusson, Y. Ding, K. J. Lee, D. Shin, P. S. Priambodo, P. P. Young, and T. A. Maldonado, Proc. SPIE 5225, 20 (2003).
[CrossRef]

Eberhart, R.

R. Eberhart and J. Kennedy, in Proceedings of IEEE Conference on Neural Networks (IEEE, 1995), pp. 1948.

Gaylord, T. K.

Golubenko, G. A.

G. A. Golubenko, A. S. Svakhin, V. A. Sychugov, and A. V. Tishchenko, Sov. J. Quantum Electron. 15, 886 (1985).
[CrossRef]

Grann, E. B.

Huang, M. C. Y.

C. F. R. Mateus, M. C. Y. Huang, L. Chen, C. J. Chang-Hasnain, and Y. Suzuki, IEEE Photon. Technol. Lett. 16, 1676 (2004).
[CrossRef]

C. F. R. Mateus, M. C. Y. Huang, Y. Deng, A. R. Neureuther, and C. J. Chang-Hasnain, IEEE Photon. Technol. Lett. 16, 518 (2004).
[CrossRef]

Kennedy, J.

R. Eberhart and J. Kennedy, in Proceedings of IEEE Conference on Neural Networks (IEEE, 1995), pp. 1948.

Lee, K. J.

R. Magnusson, Y. Ding, K. J. Lee, D. Shin, P. S. Priambodo, P. P. Young, and T. A. Maldonado, Proc. SPIE 5225, 20 (2003).
[CrossRef]

Magnusson, R.

Maldonado, T. A.

R. Magnusson, Y. Ding, K. J. Lee, D. Shin, P. S. Priambodo, P. P. Young, and T. A. Maldonado, Proc. SPIE 5225, 20 (2003).
[CrossRef]

Mashev, L.

L. Mashev and E. Popov, Opt. Commun. 55, 377 (1985).
[CrossRef]

Mateus, C. F. R.

C. F. R. Mateus, M. C. Y. Huang, Y. Deng, A. R. Neureuther, and C. J. Chang-Hasnain, IEEE Photon. Technol. Lett. 16, 518 (2004).
[CrossRef]

C. F. R. Mateus, M. C. Y. Huang, L. Chen, C. J. Chang-Hasnain, and Y. Suzuki, IEEE Photon. Technol. Lett. 16, 1676 (2004).
[CrossRef]

Moharam, M. G.

Neureuther, A. R.

C. F. R. Mateus, M. C. Y. Huang, Y. Deng, A. R. Neureuther, and C. J. Chang-Hasnain, IEEE Photon. Technol. Lett. 16, 518 (2004).
[CrossRef]

Neviere, M.

P. Vincent and M. Neviere, Appl. Phys. 20, 345 (1979).
[CrossRef]

Pommet, D. A.

Popov, E.

L. Mashev and E. Popov, Opt. Commun. 55, 377 (1985).
[CrossRef]

Priambodo, P. S.

R. Magnusson, Y. Ding, K. J. Lee, D. Shin, P. S. Priambodo, P. P. Young, and T. A. Maldonado, Proc. SPIE 5225, 20 (2003).
[CrossRef]

Shin, D.

R. Magnusson, Y. Ding, K. J. Lee, D. Shin, P. S. Priambodo, P. P. Young, and T. A. Maldonado, Proc. SPIE 5225, 20 (2003).
[CrossRef]

Shokooh-Saremi, M.

Suzuki, Y.

C. F. R. Mateus, M. C. Y. Huang, L. Chen, C. J. Chang-Hasnain, and Y. Suzuki, IEEE Photon. Technol. Lett. 16, 1676 (2004).
[CrossRef]

Svakhin, A. S.

G. A. Golubenko, A. S. Svakhin, V. A. Sychugov, and A. V. Tishchenko, Sov. J. Quantum Electron. 15, 886 (1985).
[CrossRef]

Sychugov, V. A.

I. A. Avrutsky and V. A. Sychugov, J. Mod. Opt. 36, 1527 (1989).
[CrossRef]

G. A. Golubenko, A. S. Svakhin, V. A. Sychugov, and A. V. Tishchenko, Sov. J. Quantum Electron. 15, 886 (1985).
[CrossRef]

Tishchenko, A. V.

G. A. Golubenko, A. S. Svakhin, V. A. Sychugov, and A. V. Tishchenko, Sov. J. Quantum Electron. 15, 886 (1985).
[CrossRef]

Vincent, P.

P. Vincent and M. Neviere, Appl. Phys. 20, 345 (1979).
[CrossRef]

Wang, S. S.

Young, P. P.

R. Magnusson, Y. Ding, K. J. Lee, D. Shin, P. S. Priambodo, P. P. Young, and T. A. Maldonado, Proc. SPIE 5225, 20 (2003).
[CrossRef]

Appl. Opt. (1)

Appl. Phys. (1)

P. Vincent and M. Neviere, Appl. Phys. 20, 345 (1979).
[CrossRef]

IEEE Photon. Technol. Lett. (2)

C. F. R. Mateus, M. C. Y. Huang, Y. Deng, A. R. Neureuther, and C. J. Chang-Hasnain, IEEE Photon. Technol. Lett. 16, 518 (2004).
[CrossRef]

C. F. R. Mateus, M. C. Y. Huang, L. Chen, C. J. Chang-Hasnain, and Y. Suzuki, IEEE Photon. Technol. Lett. 16, 1676 (2004).
[CrossRef]

J. Mod. Opt. (1)

I. A. Avrutsky and V. A. Sychugov, J. Mod. Opt. 36, 1527 (1989).
[CrossRef]

J. Opt. Soc. Am. A (1)

Opt. Commun. (1)

L. Mashev and E. Popov, Opt. Commun. 55, 377 (1985).
[CrossRef]

Opt. Express (3)

Opt. Lett. (1)

Proc. SPIE (1)

R. Magnusson, Y. Ding, K. J. Lee, D. Shin, P. S. Priambodo, P. P. Young, and T. A. Maldonado, Proc. SPIE 5225, 20 (2003).
[CrossRef]

Sov. J. Quantum Electron. (1)

G. A. Golubenko, A. S. Svakhin, V. A. Sychugov, and A. V. Tishchenko, Sov. J. Quantum Electron. 15, 886 (1985).
[CrossRef]

Other (1)

R. Eberhart and J. Kennedy, in Proceedings of IEEE Conference on Neural Networks (IEEE, 1995), pp. 1948.

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Figures (4)

Fig. 1
Fig. 1

Zero-order reflectance ( R 0 ) and transmittance ( T 0 ) spectra of an exemplar PSO-designed broadband, three-level reflector for a TE-polarized incident wave on (a) linear and (b) logarithmic scales. The higher-refractive-index material is silicon that conforms to an underlying silica relief structure, as shown in the inset in (a). The parameters are found to be Λ = 846.4 nm , F 11 = F 31 = 0.283 , F 21 = 1.0 , d 1 = 375 nm , d 2 = 175 nm , and d 3 = 375 nm .

Fig. 2
Fig. 2

Reflectance and transmittance spectra of a broadband, three-level reflector for TM polarization. The structural parameters are Λ = 882.4 nm , F 11 = F 21 = F 31 = 0.417 , d 1 = 572 nm , d 2 = 455 nm , and d 3 = 572 nm .

Fig. 3
Fig. 3

Reflectance spectra of broadband reflectors fashioned with Ge Si O 2 for TE ( Λ = 1080.3 nm , F 11 = F 31 = 0.253 , F 21 = 1.0 , d 1 = 533 nm , d 2 = 126 nm , and d 3 = 533 nm ) and TM ( Λ = 1077.5 nm , F 11 = F 21 = F 31 = 0.744 , d 1 = 565 nm , d 2 = 875 nm , and d 3 = 565 nm ) polarizations.

Fig. 4
Fig. 4

Reflectance spectra of the broadband reflector in Fig. 1 drawn versus ± 7.5 % and ± 10 % variations in d 2 and F.

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