Abstract

Improved outcoupling of light into substrate modes of an organic LED (OLED) by an ultra-low index of refraction (n=1.15), porous SiO2 grid (UltraLIG) fabricated using glancing-angle deposition is demonstrated. Outcoupling into the substrate for electrophosphorescent tris(2-phenylpyridine) iridium [Ir(ppy)3]-based OLEDs grown on substrates with the UltraLIG is increased by 48% over a conventional device at a luminance of 100  cd/m2. With efficient light outcoupling at the substrate–air interface, the UltraLIG devices attain ηEQE=22.5% and ηP=64  lm/W at their peak efficiencies, a nearly threefold increase over an analogous conventional OLED.

© 2010 Optical Society of America

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