Optically pumped semiconductor quantum dot disk laser operating at 1180 nm

Jussi Rautiainen; Igor Krestnikov; Mantas Butkus; Edik U. Rafailov; Oleg G. Okhotnikov

doi:10.1364/OL.35.000694

Optically pumped semiconductor quantum dot disk laser operating at $1180 nm$

Jussi Rautiainen, Igor Krestnikov, Mantas Butkus, Edik U. Rafailov, and Oleg G. Okhotnikov

Optics Letters
Vol. 35,
Issue 5,
pp. 694-696
(2010)
•https://doi.org/10.1364/OL.35.000694

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Jussi Rautiainen, Igor Krestnikov, Mantas Butkus, Edik U. Rafailov, and Oleg G. Okhotnikov, "Optically pumped semiconductor quantum dot disk laser operating at 1180 nm," Opt. Lett. 35, 694-696 (2010)

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Related Topics
Table of Contents Category
- Lasers and Laser Optics
Optics & Photonics Topics
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The topics in this list come from the OSA Optics and Photonics Topics applied to this article.
Previously assigned OCIS codes
- Lasers, diode-pumped (140.3480)
- Semiconductor lasers (140.5960)
- Vertical emitting lasers (140.7270)

About this Article
History
- Original Manuscript: November 24, 2009
- Revised Manuscript: January 13, 2010
- Manuscript Accepted: January 15, 2010
- Published: February 25, 2010

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Abstract

We demonstrate an optically pumped semiconductor disk laser using 39 layers of Stranski–Krastanov InGaAs quantum dots self-assembled during epitaxial growth on a monolithic $Ga As ∕ Al As$ distributed Bragg reflector. The gain structure bonded to an intracavity diamond crystal heat spreader allows $1.75 W$ single-transverse-mode output $(M^{2} < 1.2)$ with circular beam shape operating at $1180 nm$ in a disk laser geometry.

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