Abstract

We have designed and fabricated a dual-band resonator in the terahertz frequency range on high-resistivity silicon. The device is designed to show resonances at 2.6 and 4.3THz using the finite-difference time-domain modeling method. The characteristics of the fabricated device have been examined by using a Fourier-transform IR spectrometer. Measured results are in excellent agreement with the simulated data, showing two polarization-independent resonant peaks observed at 2.60 and 4.37THz, respectively. The first resonance has a bandwidth of 0.56THz, while the second one has a bandwidth of 0.70THz. These dual-band resonant devices can be used for various applications such as dual-band spectral imaging and multiband biosensors.

© 2010 Optical Society of America

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