Abstract

Single-crystal aluminum–gallium oxide films have been grown by molecular beam epitaxy in the corundum phase. Films of the (Al1xGax)2O3 alloys doped with neodymium have favorable properties for solid-state waveguide lasers, including a high-thermal-conductivity sapphire substrate and a dominant emission peak in the 10901096nm wavelength range. The peak position is linearly correlated to the unit cell volume, which is dependent on film composition and stress. Varying the Ga–Al alloy composition during growth will enable the fabrication of graded-index layers for tunable lasing wavelengths and low scattering losses at the interfaces.

© 2010 Optical Society of America

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