Abstract

We report on the development of periodically oriented embedded air protrusion (EAP) structures at the GaN– sapphire interface in InGaN/GaN LEDs. A specific SiO2 mask pattern and a simple wet etching process were utilized for the fabrication of EAP structures. A strong coupling between closely proximate air cavities and the multiple quantum wells promoted spontaneous emission due to the high-index contrast at the GaN–air interface. As a result, the light output power of the EAP LED was 2.2 times higher than that of a conventional LED at an injection current of 20mA.

© 2010 Optical Society of America

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