Abstract

A cw Pr:YAlO3 microchip-laser operation in the near-IR spectral region is reported. A microchip resonator was formed by dielectric mirrors directly deposited on the Pr:YAlO3 crystal surfaces. For active medium pumping, a GaN laser diode providing up to 1W of output power at ~448 nm was used. 139mW of laser radiation at 747nm wavelength has been extracted from the microchip-laser system. Slope efficiency related to the incident pumping power was ~25%.

© 2010 Optical Society of America

Full Article  |  PDF Article

References

You do not have subscription access to this journal. Citation lists with outbound citation links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access OSA Member Subscription

Cited By

You do not have subscription access to this journal. Cited by links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access OSA Member Subscription

Figures (3)

You do not have subscription access to this journal. Figure files are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access OSA Member Subscription

Metrics

You do not have subscription access to this journal. Article level metrics are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access OSA Member Subscription