Abstract

A cw Pr:YAlO3 microchip-laser operation in the near-IR spectral region is reported. A microchip resonator was formed by dielectric mirrors directly deposited on the Pr:YAlO3 crystal surfaces. For active medium pumping, a GaN laser diode providing up to 1W of output power at ~448 nm was used. 139mW of laser radiation at 747nm wavelength has been extracted from the microchip-laser system. Slope efficiency related to the incident pumping power was ~25%.

© 2010 Optical Society of America

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