Abstract

A 668nm tunable high-power narrow-spectrum diode laser system based on a tapered semiconductor optical amplifier in external cavity is demonstrated. The laser system is tunable from 659to675nm. As high as 1.38W output power is obtained at 668.35nm. The emission spectral bandwidth is less than 0.07nm throughout the tuning range, and the beam quality factor M2 is 2.0 with the output power of 1.27W.

© 2010 Optical Society of America

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