Abstract
An all-optical terahertz absorption technique for nondestructive characterization of nanometer-scale metal oxide thin films grown on silicon substrates is described. Example measurements of laser-deposited and atomic layer-deposited films of are presented to demonstrate applicability to pure , , and and mixed combinatorial films as a function of deposition conditions and thickness. This technique is also found to be sensitive to phonon modes in films with a nominal thickness of .
© 2009 U.S. Government
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