Abstract

Hybrid Si/III–V, Fabry–Perot evanescent lasers are demonstrated, utilizing InGaAsP as the III–V gain material for the first time to our knowledge. The lasing threshold current of 300-μm-long devices was as low as 24mA, with a maximal single facet output power of 4.2mW at 15°C. Longer devices achieved a maximal single facet output power as high as 12.7mW, a single facet slope efficiency of 8.4%, and a lasing threshold current density of 1kAcm2. Continuous wave laser operation was obtained up to 45°C. The threshold current density, output power, and efficiency obtained improve upon those of previously reported devices having a similar geometry. Facet images indicate that the output light is largely confined to the Si waveguide.

© 2009 Optical Society of America

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Park, H.

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[CrossRef]

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C.-E. Zah, R. Bhat, B. N. Pathak, F. Favire, W. Lin, M. C. Wang, N. C. Andreadakis, D. M. Huang, M. A. Koza, T.-P. Lee, Z. Wang, D. Darby, D. Flanders, and J. J. Hsieh, IEEE J. Quantum Electron. 30, 511 (1994).
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Raday, O.

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H. Boudinov, H. H. Tan, and C. Jagadish, J. Appl. Phys. 89, 5343 (2001).
[CrossRef]

Van Campenhout, J.

van den Hoven, G. N.

S. Lombardo, S. U. Campisano, G. N. van den Hoven, A. Cacciato, and A. Polman, Appl. Phys. Lett. 63, 1942 (1993).
[CrossRef]

Van Thouhrout, D.

Verstyuft, S.

Wang, M. C.

C.-E. Zah, R. Bhat, B. N. Pathak, F. Favire, W. Lin, M. C. Wang, N. C. Andreadakis, D. M. Huang, M. A. Koza, T.-P. Lee, Z. Wang, D. Darby, D. Flanders, and J. J. Hsieh, IEEE J. Quantum Electron. 30, 511 (1994).
[CrossRef]

Wang, Z.

C.-E. Zah, R. Bhat, B. N. Pathak, F. Favire, W. Lin, M. C. Wang, N. C. Andreadakis, D. M. Huang, M. A. Koza, T.-P. Lee, Z. Wang, D. Darby, D. Flanders, and J. J. Hsieh, IEEE J. Quantum Electron. 30, 511 (1994).
[CrossRef]

Yariv, A.

Zah, C.-E.

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[CrossRef]

Appl. Phys. Lett. (1)

S. Lombardo, S. U. Campisano, G. N. van den Hoven, A. Cacciato, and A. Polman, Appl. Phys. Lett. 63, 1942 (1993).
[CrossRef]

Electron. Lett. (1)

L. J. P. Ketelsen, Electron. Lett. 30, 1422 (1994).
[CrossRef]

IEEE J. Quantum Electron. (1)

C.-E. Zah, R. Bhat, B. N. Pathak, F. Favire, W. Lin, M. C. Wang, N. C. Andreadakis, D. M. Huang, M. A. Koza, T.-P. Lee, Z. Wang, D. Darby, D. Flanders, and J. J. Hsieh, IEEE J. Quantum Electron. 30, 511 (1994).
[CrossRef]

IEEE J. Sel. Top. Quantum Electron. (1)

D. Pasquariello and K. Hjort, IEEE J. Sel. Top. Quantum Electron. 8, 118 (2002).
[CrossRef]

J. Appl. Phys. (1)

H. Boudinov, H. H. Tan, and C. Jagadish, J. Appl. Phys. 89, 5343 (2001).
[CrossRef]

J. Cryst. Growth (1)

H. Kromer, T.-Y. Liu, and P. M. Petroff, J. Cryst. Growth 95, 96 (1989).
[CrossRef]

J. Opt. Soc. Am. B (1)

Nat. Photonics (1)

B. Jalali, Nat. Photonics 1, 193 (2007).
[CrossRef]

Nature (1)

L. Pavesi, L. Dal Negro, C. Mazzoleni, G. Franzo, and F. Priolo, Nature 408, 440 (2000).
[CrossRef] [PubMed]

Opt. Express (6)

Other (1)

M. Fukuda, Optical Semiconductor Devices (Wiley, 1999), Chap. 7.

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Figures (2)

Fig. 1
Fig. 1

(a) Top view of a fabricated device. (b) SEM overview of a cross section of the device. (c) SEM close-up view of the device cross section at the Si waveguide region. Approximate ion implanted regions are superimposed on the image for illustration.

Fig. 2
Fig. 2

(a) L–I–V curve of a 960 - μ m -long laser under cw operation at 15 ° C . Inset, lasing threshold current (mA, log scale) as a function of temperature (°C) (+), alongside a linear fit (dashed line). (b) Laser spectrum, dB scale. (c) Image of the lasing mode, superimposed upon a scaled SEM cross-sectional view of the device. The solid lines indicate the main current paths from the p side towards the n side, as defined by the ion implantation. The dashed line indicates a residual leakage current path.

Tables (1)

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Table 1 InGaAsP Wafer Epilayer Structure

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