Abstract

A high-speed compact silicon modulator based on the lateral capacitor configuration is experimentally demonstrated with low-power consumption and 3dB modulation depth. The capacitor layout is introduced to scale down the total modulator capacitance to 30×1015F, which effectively reduces the rf power consumption to 0.54pJbit. Exploiting the slow group velocity of light in the slot photonic crystal waveguides, the device reported herein exhibits higher modulation efficiency than conventional capacitor modulator and provides a VπL figure of merit of 0.18Vcm at the wavelength of 1548nm.

© 2009 Optical Society of America

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