Abstract

Up to 136 mW of cw single-frequency output at 295 nm was obtained from a frequency-quadrupled optically pumped semiconductor laser. The highly strained InGaAs quantum-well semiconductor laser operates at 1178 nm in a single frequency. The single-frequency intracavity-doubled 589 nm output is further converted to 295 nm in an external resonator using β-BaB2O4.

© 2009 Optical Society of America

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