Abstract

Optical spectra and luminescence decay curves were measured for erbium-doped YVO4 and GdVO4 single crystals as a function of temperature in the 300K670K temperature region. In spite of structural similarity the two systems studied display significantly different transition intensities and nonradiative relaxation rates. It was found in particular that the intensity of parasitic upconverted emission excited at 978nm depends weakly on temperature for YVO4:Er3+, whereas it decreases monotonously with increasing temperature for GdVO4:Er3+ and becomes negligibly small at 670K. It was concluded that GdVO4:Er3+ may be a promising laser active material operating at high thermal loading conditions encountered in high-power diode-pumped IR lasers.

© 2009 Optical Society of America

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