Abstract

A III–V thin-film single-quantum-well edge-emitting laser is patterned on both sides of the epitaxial layer and bonded to silicon. Injected threshold current densities of 420Acm2 for gain-guided lasers with bottom p-stripes and top n-stripes and 244Acm2 for index-guided bottom p-ridge and top n-stripe lasers are measured with a lasing wavelength of 995nm. These threshold current densities, among the lowest for thin-film edge-emitting lasers on silicon reported to date (to our knowledge), enable the implementation of integrated applications such as power-efficient portable chip-scale photonic sensing systems.

© 2009 Optical Society of America

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