Abstract

We report on a Yb3+-doped sesquioxide waveguide laser based on a lattice-matched Yb3+(3%):(Gd,Lu)2O3 film that has been epitaxially grown on Y2O3 using pulsed laser deposition. Rib-channel waveguides have been structured by reactive ion etching. Laser emission at 976.8 nm was observed under pumping with a Ti3+:Al2O3 laser at 905 nm. A laser threshold of 17 mW and a slope efficiency of 6.7% have been achieved with respect to input power. For an incident pump power of 200 mW, a maximum output power of 12 mW could be realized.

© 2009 Optical Society of America

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