Abstract

We demonstrate what we believe to be the first use of AlGaInAs quantum wells (QWs) as a saturable absorber for a diode-pumped passively mode locked Nd:YVO4 laser at 1342nm. The QWs are grown on a Fe-doped InP substrate that is transparent at lasing wavelength. At an incident pump power of 13.5W an average output power of 1.05W with a continuous mode-locked pulse duration of 26.4ps at a repetition rate of 152MHz was generated.

© 2009 Optical Society of America

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