Abstract

A self-frequency-doubled KTiOAsO4 (KTA) Raman laser is realized in a diode-end-pumped acousto-optically Q-switched intracavity Raman laser configuration. A 30-mm-long x-cut KTA crystal is used as the Raman medium, and its 671cm1 Raman mode is employed to finish the conversion from 1064nm fundamental laser to 1146nm Raman laser. Self-frequency doubling of the Raman laser is accomplished in the same KTA crystal, and a 573nm yellow laser is obtained. With an incident diode power of 10.9W and a pulse repetition rate of 20.8kHz, a yellow-laser power of 0.82W is obtained. The conversion efficiency from diode power to yellow-laser power is 7.5%.

© 2009 Optical Society of America

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