Abstract

High-quality Er3+:ZnO films were grown by the pulsed-laser deposition technique for 0.5 and 2wt.% Er doping. Two peaks were observed at approximately 1.54μm in the photoluminescence spectra of samples with 2wt.% doping contrary to only one peak in the 0.5wt.% doped sample. Both peaks were found to be strongly temperature dependent. The microscopic studies clearly illustrate that the appearance of the additional peak is attributed to the environment of Er3+ ions in the form of ErO6 clusters, which are optically active centers in the ZnO matrix. These results are very important for designing waveguides for telecommunications.

© 2008 Optical Society of America

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