Abstract

We demonstrate output wavelength and intensity switching in a three-element directly coupled microdisk device consisting of one spiral microdisk coupled to two semicircle microdisks. The gapless coupling mechanism used allows individual elements to achieve lasing while achieving optimal transfer of optical power between adjacent microdisks. By controlling the transparency of the center element via injection current, the edge elements can be allowed to exchange their amplified spontaneous emission. In this manner, on–off–on switching of the output intensity, as well as discontinuous shifts in the output wavelength, can be achieved as a function of increasing injection current.

© 2008 Optical Society of America

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References

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2007 (1)

2004 (3)

2003 (1)

2002 (2)

A. Yariv, IEEE Photon. Technol. Lett. 14, 483 (2002).
[CrossRef]

Y. Pan and R. K. Chang, Appl. Phys. Lett. 82, 487 (2002).
[CrossRef]

2001 (1)

N. B. Rex, R. K. Chang, and L. J. Guido, IEEE Photon. Technol. Lett. 13, 1 (2001).
[CrossRef]

1984 (1)

N. A. Olsson, W. T. Tsang, and R. A. Logan, Appl. Phys. Lett. 44, 375 (1984).
[CrossRef]

1983 (1)

W. T. Tsang, N. A. Olsson, and R. A. Logan, Appl. Phys. Lett. 42, 650 (1983).
[CrossRef]

Appl. Phys. Lett. (4)

Y. Pan and R. K. Chang, Appl. Phys. Lett. 82, 487 (2002).
[CrossRef]

M. Kneissl, M. Teepe, N. Miyahsita, N. M. Johnson, G. D. Chern, and R. K. Chang, Appl. Phys. Lett. 84, 2485 (2004).
[CrossRef]

W. T. Tsang, N. A. Olsson, and R. A. Logan, Appl. Phys. Lett. 42, 650 (1983).
[CrossRef]

N. A. Olsson, W. T. Tsang, and R. A. Logan, Appl. Phys. Lett. 44, 375 (1984).
[CrossRef]

IEEE Photon. Technol. Lett. (2)

A. Yariv, IEEE Photon. Technol. Lett. 14, 483 (2002).
[CrossRef]

N. B. Rex, R. K. Chang, and L. J. Guido, IEEE Photon. Technol. Lett. 13, 1 (2001).
[CrossRef]

J. Opt. Soc. Am. B (1)

Opt. Lett. (3)

Other (2)

R. K. Chang, G. E. Fernandes, and M. Kneissl, in ICTON 2006 Conference Proceedings, (IEEE2006), Vol. 1, pp. 47-51.

O. Svelto, Principles of Lasers (Plenum, 1998).

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Figures (3)

Fig. 1
Fig. 1

(a) Scanning electron microscope (SEM) image. (b) AlGaAs microdisk heterostructure. (c) Top view showing p-contacts and insulation pads. Note: SEM figure shows equivalent GaN device.

Fig. 2
Fig. 2

Output spectra as a function of injection current for different pumping configurations. The current in the darkened element is ramped from 0 to 1700 A cm 2 .

Fig. 3
Fig. 3

(a) Spiral and SC-2 in the lasing regime. (b) Peak intensity of the main peaks appearing in the spectra.

Tables (1)

Tables Icon

Table 1 Lasing Wavelength and Threshold Current of Individual Elements in the Three-Element Device

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