An infrared (IR) polarizer with tungsten silicide (WSi) wire grid was fabricated by two-beam interference exposure and reactive ion etching. To enhance TM transmittance, silicon monoxide was deposited between the WSi wire grid ( period) and a Si substrate. The transmittance was over 80% in the wavelength range. The ratio of TM and TE transmittances was over 100 in the wavelength range. The fabricated polarizer has higher durability and bettter compatibility with microfabrication processes compared with conventional IR polarizers.
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