Abstract

The resolution limit of present $0.3\mathrm{NA}$ $13.5\mathrm{nm}$ wavelength microexposure tools is compared to next-generation lithography research requirements. Findings suggest that a successor design is needed for patterning starting at the $16\mathrm{nm}$ semiconductor process technology node. A two-mirror $0.5\mathrm{NA}$ optical design is presented, and performance expectations are established from detailed optical and lithographic simulation. We report on the results from a SEMATECH program to fabricate a projection optic with an ultimate resolution limit of approximately $11\mathrm{nm}$.

© 2008 Optical Society of America

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