Abstract

The resolution limit of present 0.3 NA 13.5 nm wavelength microexposure tools is compared to next-generation lithography research requirements. Findings suggest that a successor design is needed for patterning starting at the 16 nm semiconductor process technology node. A two-mirror 0.5 NA optical design is presented, and performance expectations are established from detailed optical and lithographic simulation. We report on the results from a SEMATECH program to fabricate a projection optic with an ultimate resolution limit of approximately 11 nm.

© 2008 Optical Society of America

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