Abstract

We report on a metallization scheme of high reflectance, low resistance, and smooth surface morphology ohmic contact on p-type GaN. Ag–Cu alloy/Ru contact showed low contact resistivity as low as 6.2×106Ωcm2 and high reflectance of 91% at 460nm after annealing at 400°C in air ambient. The oxidation annealing promoted the out-diffusion of Ga atoms to dissolve in an Ag–Cu layer with the formation of an Ag–Ga solid solution, lowering the contact resistivity. The Ru overlayer acts as a diffusion barrier for excessive oxygen incorporation during oxidation annealing, resulting in high reflectance, good thermal stability, and smooth surface quality of the contact.

© 2008 Optical Society of America

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J. Lv, F. Lai, L. Lin, Y. Lin, Z. Huang, and R. Chen, Appl. Surf. Sci. 253, 7036 (2007).
[CrossRef]

L.-B. Chang, C.-C. Shiue, and M.-J. Jeng, Appl. Phys. Lett. 90, 163515 (2007).
[CrossRef]

S. Kim, J.-H. Jang, and J.-S. Lee, J. Electrochem. Soc. 154, H973 (2007).
[CrossRef]

2006

J.-Y. Kim, S.-I. Na, G.-Y. Ha, M.-K. Kwon, I.-K. Park, J.-H. Lim, and S.-J. Park, Appl. Phys. Lett. 88, 043507 (2006).
[CrossRef]

2005

2004

1998

J. K. Kim, J. L. Lee, J. W. Lee, H. E. Shin, Y. J. Park, and T. Kim, Appl. Phys. Lett. 73, 2953 (1998).
[CrossRef]

Chan, M.-C.

Chang, L.-B.

L.-B. Chang, C.-C. Shiue, and M.-J. Jeng, Appl. Phys. Lett. 90, 163515 (2007).
[CrossRef]

Chen, R.

J. Lv, F. Lai, L. Lin, Y. Lin, Z. Huang, and R. Chen, Appl. Surf. Sci. 253, 7036 (2007).
[CrossRef]

Cho, J.

Choi, K.-K.

Chu, S.-W.

DenBaars, S. P.

Ha, G.-Y.

J.-Y. Kim, S.-I. Na, G.-Y. Ha, M.-K. Kwon, I.-K. Park, J.-H. Lim, and S.-J. Park, Appl. Phys. Lett. 88, 043507 (2006).
[CrossRef]

Huang, Z.

J. Lv, F. Lai, L. Lin, Y. Lin, Z. Huang, and R. Chen, Appl. Surf. Sci. 253, 7036 (2007).
[CrossRef]

Jang, J.-H.

S. Kim, J.-H. Jang, and J.-S. Lee, J. Electrochem. Soc. 154, H973 (2007).
[CrossRef]

Jeng, M.-J.

L.-B. Chang, C.-C. Shiue, and M.-J. Jeng, Appl. Phys. Lett. 90, 163515 (2007).
[CrossRef]

Jung, G. H.

J. H. Son, G. H. Jung, and J.-L. Lee, Appl. Phys. Lett. 93, 012102 (2008).
[CrossRef]

Keller, S.

Kim, H.

Kim, J. K.

E. F. Schubert and J. K. Kim, Science 308, 1274 (2005).
[CrossRef] [PubMed]

J. K. Kim, J. L. Lee, J. W. Lee, H. E. Shin, Y. J. Park, and T. Kim, Appl. Phys. Lett. 73, 2953 (1998).
[CrossRef]

Kim, J.-Y.

J.-Y. Kim, S.-I. Na, G.-Y. Ha, M.-K. Kwon, I.-K. Park, J.-H. Lim, and S.-J. Park, Appl. Phys. Lett. 88, 043507 (2006).
[CrossRef]

Kim, K.-K.

Kim, S.

S. Kim, J.-H. Jang, and J.-S. Lee, J. Electrochem. Soc. 154, H973 (2007).
[CrossRef]

Kim, T.

J. K. Kim, J. L. Lee, J. W. Lee, H. E. Shin, Y. J. Park, and T. Kim, Appl. Phys. Lett. 73, 2953 (1998).
[CrossRef]

Kuroda, T.

Kwak, J. S.

Kwon, M.-K.

J.-Y. Kim, S.-I. Na, G.-Y. Ha, M.-K. Kwon, I.-K. Park, J.-H. Lim, and S.-J. Park, Appl. Phys. Lett. 88, 043507 (2006).
[CrossRef]

Lai, F.

J. Lv, F. Lai, L. Lin, Y. Lin, Z. Huang, and R. Chen, Appl. Surf. Sci. 253, 7036 (2007).
[CrossRef]

Lee, C. C.

Lee, J. L.

J. K. Kim, J. L. Lee, J. W. Lee, H. E. Shin, Y. J. Park, and T. Kim, Appl. Phys. Lett. 73, 2953 (1998).
[CrossRef]

Lee, J. W.

J. K. Kim, J. L. Lee, J. W. Lee, H. E. Shin, Y. J. Park, and T. Kim, Appl. Phys. Lett. 73, 2953 (1998).
[CrossRef]

Lee, J.-L.

J. H. Son, G. H. Jung, and J.-L. Lee, Appl. Phys. Lett. 93, 012102 (2008).
[CrossRef]

Lee, J.-S.

S. Kim, J.-H. Jang, and J.-S. Lee, J. Electrochem. Soc. 154, H973 (2007).
[CrossRef]

Lee, S.-N.

Lim, J.-H.

J.-Y. Kim, S.-I. Na, G.-Y. Ha, M.-K. Kwon, I.-K. Park, J.-H. Lim, and S.-J. Park, Appl. Phys. Lett. 88, 043507 (2006).
[CrossRef]

Lin, L.

J. Lv, F. Lai, L. Lin, Y. Lin, Z. Huang, and R. Chen, Appl. Surf. Sci. 253, 7036 (2007).
[CrossRef]

Lin, Y.

J. Lv, F. Lai, L. Lin, Y. Lin, Z. Huang, and R. Chen, Appl. Surf. Sci. 253, 7036 (2007).
[CrossRef]

Lv, J.

J. Lv, F. Lai, L. Lin, Y. Lin, Z. Huang, and R. Chen, Appl. Surf. Sci. 253, 7036 (2007).
[CrossRef]

Morkoç, H.

Na, S.-I.

J.-Y. Kim, S.-I. Na, G.-Y. Ha, M.-K. Kwon, I.-K. Park, J.-H. Lim, and S.-J. Park, Appl. Phys. Lett. 88, 043507 (2006).
[CrossRef]

Neogi, A.

Park, I.-K.

J.-Y. Kim, S.-I. Na, G.-Y. Ha, M.-K. Kwon, I.-K. Park, J.-H. Lim, and S.-J. Park, Appl. Phys. Lett. 88, 043507 (2006).
[CrossRef]

Park, J.

Park, S.-J.

J.-Y. Kim, S.-I. Na, G.-Y. Ha, M.-K. Kwon, I.-K. Park, J.-H. Lim, and S.-J. Park, Appl. Phys. Lett. 88, 043507 (2006).
[CrossRef]

Park, Y.

Park, Y. J.

J. K. Kim, J. L. Lee, J. W. Lee, H. E. Shin, Y. J. Park, and T. Kim, Appl. Phys. Lett. 73, 2953 (1998).
[CrossRef]

Schubert, E. F.

E. F. Schubert and J. K. Kim, Science 308, 1274 (2005).
[CrossRef] [PubMed]

Seong, T.-Y.

Shin, H. E.

J. K. Kim, J. L. Lee, J. W. Lee, H. E. Shin, Y. J. Park, and T. Kim, Appl. Phys. Lett. 73, 2953 (1998).
[CrossRef]

Shin, M.

Shiue, C.-C.

L.-B. Chang, C.-C. Shiue, and M.-J. Jeng, Appl. Phys. Lett. 90, 163515 (2007).
[CrossRef]

Son, J. H.

J. H. Son, G. H. Jung, and J.-L. Lee, Appl. Phys. Lett. 93, 012102 (2008).
[CrossRef]

Song, J.-O.

J.-O. Song, J. S. Kwak, Y. Park, and T.-Y. Seong, Appl. Phys. Lett. 86, 062104 (2005).
[CrossRef]

Sun, C.-K.

Tacheuchi, A.

Tai, S.-P.

Appl. Phys. Lett.

L.-B. Chang, C.-C. Shiue, and M.-J. Jeng, Appl. Phys. Lett. 90, 163515 (2007).
[CrossRef]

J.-O. Song, J. S. Kwak, Y. Park, and T.-Y. Seong, Appl. Phys. Lett. 86, 062104 (2005).
[CrossRef]

J.-Y. Kim, S.-I. Na, G.-Y. Ha, M.-K. Kwon, I.-K. Park, J.-H. Lim, and S.-J. Park, Appl. Phys. Lett. 88, 043507 (2006).
[CrossRef]

J. H. Son, G. H. Jung, and J.-L. Lee, Appl. Phys. Lett. 93, 012102 (2008).
[CrossRef]

J. K. Kim, J. L. Lee, J. W. Lee, H. E. Shin, Y. J. Park, and T. Kim, Appl. Phys. Lett. 73, 2953 (1998).
[CrossRef]

Appl. Surf. Sci.

J. Lv, F. Lai, L. Lin, Y. Lin, Z. Huang, and R. Chen, Appl. Surf. Sci. 253, 7036 (2007).
[CrossRef]

J. Electrochem. Soc.

S. Kim, J.-H. Jang, and J.-S. Lee, J. Electrochem. Soc. 154, H973 (2007).
[CrossRef]

Opt. Lett.

Science

E. F. Schubert and J. K. Kim, Science 308, 1274 (2005).
[CrossRef] [PubMed]

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Figures (5)

Fig. 1
Fig. 1

Specific contact resistivities of Ag–Cu and Ag Cu Ru contacts as a function of annealing temperature.

Fig. 2
Fig. 2

Change of ratios, ρ t ρ 0 for Ag–Cu and Ag Cu Ru contacts as a function of annealing time at 400 ° C in air ambient.

Fig. 3
Fig. 3

SIMS depth profiles of Ag–Cu and Ag Cu Ru contacts before and after annealing. Both contacts were annealed at 400 ° C for 1 min in air ambient.

Fig. 4
Fig. 4

Light reflectance spectra of Ag–Cu and Ag Cu Ru contacts after annealing at 400 ° C for 1 min in air ambient.

Fig. 5
Fig. 5

SEM micrographs of (a) Ag–Cu and (b) Ag Cu Ru contacts after annealing at 400 ° C for 1 min in air ambient.

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