Abstract

We haves realized and measured a GaAs nanocavity in a slab photonic crystal based on the design by Kuramochi et al. [Appl. Phys. Lett. 88, 041112 (2006) ]. We measure a quality factor $Q=\mathrm{700,000}$, which proves that ultrahigh Q nanocavities are also feasible in GaAs. We show that owing to larger two-photon absorption in GaAs nonlinearities appear at the microwatt level and will be more functional in gallium arsenide than in silicon nanocavities.

© 2008 Optical Society of America

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