Abstract

We propose and demonstrate a novel Ge photodetector on silicon-on-insulator based on a junction field effect transistor structure, where the field-effect transistor gate is replaced by a Ge island with no contact on it. Light incident on the Ge switches on the device by altering the conductance of the Si channel through secondary photoconductivity. The device’s sensitivity is also enhanced by a vast reduction in parasitic capacitance. In cw measurements, proof-of-concept detectors exhibit up to a 33% change in Si channel conductance by absorbing only 200nW of power at 1.55μm. In addition, pulsed response tests have shown that rise times as low as 40ps can be achieved.

© 2008 Optical Society of America

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  1. B. Jalali, M. J. Paniccia, and G. Reed, IEEE Microw. Mag. 7, 58 (2006).
    [CrossRef]
  2. G. Masini, G. Capellini, J. Witzens, and C. Gunn, in National Fiber Optic Engineers Conference, OSA Technical Digest Series (CD) (Optical Society of America, 2007), paper PDP31.
  3. T. Yin, R. Cohen, M. M. Morse, G. Sarid, Y. Chetrit, D. Rubin, and M. J. Paniccia, Opt. Express 15, 13965 (2007).
    [CrossRef] [PubMed]
  4. A. Rose, Concepts in Photoconductivity and Allied Problems (Interscience, 1963).
  5. G. Masini, L. Colace, G. Assanto, H.-C. Luan, and L. C. Kimmerling, IEEE Trans. Electron. Devices 48, 1092 (2001).
    [CrossRef]
  6. B. Razavi, Design of Integrated Circuits for Optical Communications (McGraw-Hill, 2003).
  7. J. Liu, H. J. Kim, O. Hul'ko, Y. H. Xie, S. Sahni, P. Bandaru, and E. Yablonovitch, J. Appl. Phys. 96, 916 (2004).
    [CrossRef]
  8. G. Masini, L. Colace, F. Galluzzi, and G. Assanto, Mater. Sci. Eng. B 69-70, 257 (2000).
    [CrossRef]
  9. P. R. Bandaru, S. Sahni, E. Yablonovitch, J. Liu, H. J. Kim, and Y. H. Xie, Mater. Sci. Eng. B 113, 79 (2004).
    [CrossRef]
  10. D. Y. C. Lie, J. Electron. Mater. 27, 377 (1998).
    [CrossRef]
  11. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, 1981).

2007 (1)

2006 (1)

B. Jalali, M. J. Paniccia, and G. Reed, IEEE Microw. Mag. 7, 58 (2006).
[CrossRef]

2004 (2)

P. R. Bandaru, S. Sahni, E. Yablonovitch, J. Liu, H. J. Kim, and Y. H. Xie, Mater. Sci. Eng. B 113, 79 (2004).
[CrossRef]

J. Liu, H. J. Kim, O. Hul'ko, Y. H. Xie, S. Sahni, P. Bandaru, and E. Yablonovitch, J. Appl. Phys. 96, 916 (2004).
[CrossRef]

2003 (1)

B. Razavi, Design of Integrated Circuits for Optical Communications (McGraw-Hill, 2003).

2001 (1)

G. Masini, L. Colace, G. Assanto, H.-C. Luan, and L. C. Kimmerling, IEEE Trans. Electron. Devices 48, 1092 (2001).
[CrossRef]

2000 (1)

G. Masini, L. Colace, F. Galluzzi, and G. Assanto, Mater. Sci. Eng. B 69-70, 257 (2000).
[CrossRef]

1998 (1)

D. Y. C. Lie, J. Electron. Mater. 27, 377 (1998).
[CrossRef]

1981 (1)

S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, 1981).

1963 (1)

A. Rose, Concepts in Photoconductivity and Allied Problems (Interscience, 1963).

Assanto, G.

G. Masini, L. Colace, G. Assanto, H.-C. Luan, and L. C. Kimmerling, IEEE Trans. Electron. Devices 48, 1092 (2001).
[CrossRef]

G. Masini, L. Colace, F. Galluzzi, and G. Assanto, Mater. Sci. Eng. B 69-70, 257 (2000).
[CrossRef]

Bandaru, P.

J. Liu, H. J. Kim, O. Hul'ko, Y. H. Xie, S. Sahni, P. Bandaru, and E. Yablonovitch, J. Appl. Phys. 96, 916 (2004).
[CrossRef]

Bandaru, P. R.

P. R. Bandaru, S. Sahni, E. Yablonovitch, J. Liu, H. J. Kim, and Y. H. Xie, Mater. Sci. Eng. B 113, 79 (2004).
[CrossRef]

Capellini, G.

G. Masini, G. Capellini, J. Witzens, and C. Gunn, in National Fiber Optic Engineers Conference, OSA Technical Digest Series (CD) (Optical Society of America, 2007), paper PDP31.

Chetrit, Y.

Cohen, R.

Colace, L.

G. Masini, L. Colace, G. Assanto, H.-C. Luan, and L. C. Kimmerling, IEEE Trans. Electron. Devices 48, 1092 (2001).
[CrossRef]

G. Masini, L. Colace, F. Galluzzi, and G. Assanto, Mater. Sci. Eng. B 69-70, 257 (2000).
[CrossRef]

Galluzzi, F.

G. Masini, L. Colace, F. Galluzzi, and G. Assanto, Mater. Sci. Eng. B 69-70, 257 (2000).
[CrossRef]

Gunn, C.

G. Masini, G. Capellini, J. Witzens, and C. Gunn, in National Fiber Optic Engineers Conference, OSA Technical Digest Series (CD) (Optical Society of America, 2007), paper PDP31.

Hul'ko, O.

J. Liu, H. J. Kim, O. Hul'ko, Y. H. Xie, S. Sahni, P. Bandaru, and E. Yablonovitch, J. Appl. Phys. 96, 916 (2004).
[CrossRef]

Jalali, B.

B. Jalali, M. J. Paniccia, and G. Reed, IEEE Microw. Mag. 7, 58 (2006).
[CrossRef]

Kim, H. J.

P. R. Bandaru, S. Sahni, E. Yablonovitch, J. Liu, H. J. Kim, and Y. H. Xie, Mater. Sci. Eng. B 113, 79 (2004).
[CrossRef]

J. Liu, H. J. Kim, O. Hul'ko, Y. H. Xie, S. Sahni, P. Bandaru, and E. Yablonovitch, J. Appl. Phys. 96, 916 (2004).
[CrossRef]

Kimmerling, L. C.

G. Masini, L. Colace, G. Assanto, H.-C. Luan, and L. C. Kimmerling, IEEE Trans. Electron. Devices 48, 1092 (2001).
[CrossRef]

Lie, D. Y. C.

D. Y. C. Lie, J. Electron. Mater. 27, 377 (1998).
[CrossRef]

Liu, J.

P. R. Bandaru, S. Sahni, E. Yablonovitch, J. Liu, H. J. Kim, and Y. H. Xie, Mater. Sci. Eng. B 113, 79 (2004).
[CrossRef]

J. Liu, H. J. Kim, O. Hul'ko, Y. H. Xie, S. Sahni, P. Bandaru, and E. Yablonovitch, J. Appl. Phys. 96, 916 (2004).
[CrossRef]

Luan, H.-C.

G. Masini, L. Colace, G. Assanto, H.-C. Luan, and L. C. Kimmerling, IEEE Trans. Electron. Devices 48, 1092 (2001).
[CrossRef]

Masini, G.

G. Masini, L. Colace, G. Assanto, H.-C. Luan, and L. C. Kimmerling, IEEE Trans. Electron. Devices 48, 1092 (2001).
[CrossRef]

G. Masini, L. Colace, F. Galluzzi, and G. Assanto, Mater. Sci. Eng. B 69-70, 257 (2000).
[CrossRef]

G. Masini, G. Capellini, J. Witzens, and C. Gunn, in National Fiber Optic Engineers Conference, OSA Technical Digest Series (CD) (Optical Society of America, 2007), paper PDP31.

Morse, M. M.

Paniccia, M. J.

Razavi, B.

B. Razavi, Design of Integrated Circuits for Optical Communications (McGraw-Hill, 2003).

Reed, G.

B. Jalali, M. J. Paniccia, and G. Reed, IEEE Microw. Mag. 7, 58 (2006).
[CrossRef]

Rose, A.

A. Rose, Concepts in Photoconductivity and Allied Problems (Interscience, 1963).

Rubin, D.

Sahni, S.

P. R. Bandaru, S. Sahni, E. Yablonovitch, J. Liu, H. J. Kim, and Y. H. Xie, Mater. Sci. Eng. B 113, 79 (2004).
[CrossRef]

J. Liu, H. J. Kim, O. Hul'ko, Y. H. Xie, S. Sahni, P. Bandaru, and E. Yablonovitch, J. Appl. Phys. 96, 916 (2004).
[CrossRef]

Sarid, G.

Sze, S. M.

S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, 1981).

Witzens, J.

G. Masini, G. Capellini, J. Witzens, and C. Gunn, in National Fiber Optic Engineers Conference, OSA Technical Digest Series (CD) (Optical Society of America, 2007), paper PDP31.

Xie, Y. H.

J. Liu, H. J. Kim, O. Hul'ko, Y. H. Xie, S. Sahni, P. Bandaru, and E. Yablonovitch, J. Appl. Phys. 96, 916 (2004).
[CrossRef]

P. R. Bandaru, S. Sahni, E. Yablonovitch, J. Liu, H. J. Kim, and Y. H. Xie, Mater. Sci. Eng. B 113, 79 (2004).
[CrossRef]

Yablonovitch, E.

P. R. Bandaru, S. Sahni, E. Yablonovitch, J. Liu, H. J. Kim, and Y. H. Xie, Mater. Sci. Eng. B 113, 79 (2004).
[CrossRef]

J. Liu, H. J. Kim, O. Hul'ko, Y. H. Xie, S. Sahni, P. Bandaru, and E. Yablonovitch, J. Appl. Phys. 96, 916 (2004).
[CrossRef]

Yin, T.

IEEE Microw. Mag. (1)

B. Jalali, M. J. Paniccia, and G. Reed, IEEE Microw. Mag. 7, 58 (2006).
[CrossRef]

IEEE Trans. Electron. Devices (1)

G. Masini, L. Colace, G. Assanto, H.-C. Luan, and L. C. Kimmerling, IEEE Trans. Electron. Devices 48, 1092 (2001).
[CrossRef]

J. Appl. Phys. (1)

J. Liu, H. J. Kim, O. Hul'ko, Y. H. Xie, S. Sahni, P. Bandaru, and E. Yablonovitch, J. Appl. Phys. 96, 916 (2004).
[CrossRef]

J. Electron. Mater. (1)

D. Y. C. Lie, J. Electron. Mater. 27, 377 (1998).
[CrossRef]

Mater. Sci. Eng. B (2)

G. Masini, L. Colace, F. Galluzzi, and G. Assanto, Mater. Sci. Eng. B 69-70, 257 (2000).
[CrossRef]

P. R. Bandaru, S. Sahni, E. Yablonovitch, J. Liu, H. J. Kim, and Y. H. Xie, Mater. Sci. Eng. B 113, 79 (2004).
[CrossRef]

Opt. Express (1)

Other (4)

A. Rose, Concepts in Photoconductivity and Allied Problems (Interscience, 1963).

B. Razavi, Design of Integrated Circuits for Optical Communications (McGraw-Hill, 2003).

S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, 1981).

G. Masini, G. Capellini, J. Witzens, and C. Gunn, in National Fiber Optic Engineers Conference, OSA Technical Digest Series (CD) (Optical Society of America, 2007), paper PDP31.

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Figures (4)

Fig. 1
Fig. 1

Schematic of a “photoheterojunction FET.” A Ge island deposited on the channel of an FET acts as a gate. When photocarriers are created in the Ge, the band alignment at the interface (see inset) facilitates the trapping of photoholes in the Ge. The resultant charge separation modulates the Si channel conductance and therefore emulates junction-FET behavior.

Fig. 2
Fig. 2

(a) Top view of the fabricated devices. (b) Zoomed-in SEM picture of the channel.

Fig. 3
Fig. 3

Percentage increase in channel conductance versus power absorbed by the Ge gate at 1.55 μ m ( 0.5 V source-drain bias). The effect of the light saturates, which is analogous to the effect of the gate voltage on the characteristics of a normal FET. The smaller device shows higher sensitivity.

Fig. 4
Fig. 4

Response to a 1 ps mode-locked pulse with the rise time in the inset ( 0.5 V source-drain bias).

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