Abstract

We report the first demonstration to our knowledge of passive mode locking in a diode-pumped Er3+ and Yb3+ codoped YAl3(BO3)4 laser operating in the 1.51.6μm spectral region. Low-loss GaInNAs quantum-well semiconductor saturable absorber mirrors are used for the initiation and stabilization of the ultrashort-pulse generation. Pulses as short as 4.8ps were generated at 1530nm with an average output power up to 280mW for 2W of absorbed pump power produced by a high-brightness tapered 980nm laser diode. Passive mode locking has also been demonstrated around 1555nm with typical average powers of around 100mW and pulse durations of 5.1ps.

© 2008 Optical Society of America

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2007 (2)

N. I. Leonyuk, V. V. Maltsev, E. A. Volkova, O. V. Pilipenko, E. V. Koporulina, V. E. Kisel, N. A. Tolstik, S. V. Kurilchik, and N. V. Kuleshov, Opt. Mater. 30, 161 (2007).
[CrossRef]

N. A. Tolstik, S. V. Kurilchik, V. E. Kisel, N. V. Kuleshov, V. V. Maltsev, O. V. Pilipenko, E. V. Koporulina, and N. I. Leonyuk, Opt. Lett. 32, 3233 (2007).
[CrossRef] [PubMed]

2005 (2)

G. J. Spühler, K. J. Weingarten, R. Grange, L. Krainer, M. Haiml, V. Liverini, M. Golling, S. Schön, and U. Keller, Appl. Phys. B 81, 27 (2005).
[CrossRef]

A. Rutz, R. Grange, V. Liverini, M. Haiml, S. Schön, and U. Keller, Electron. Lett. 41, 321 (2005).
[CrossRef]

2004 (3)

C. S. Zeller, L. Krainer, G. J. Spühler, R. Paschotta, M. Colling, D. Ebling, K. J. Weingarten, and U. Keller, Electron. Lett. 40, 875 (2004).
[CrossRef]

B. Denker, B. Galagan, L. Ivleva, V. Osiko, S. Sverchkov, I. Voronina, J. E. Hellstrom, G. Karlsson, and F. Laurell, Appl. Phys. B 79, 577 (2004).
[CrossRef]

W. You, Y. Lin, Y. Chen, Z. Luo, and Y. Huang, J. Cryst. Growth 270, 481 (2004).
[CrossRef]

2003 (1)

2002 (1)

P. Burns, J. Dawes, P. Dekker, J. Piper, H. Jiang, and J. Wang, IEEE Photon. Technol. Lett. 14, 1677 (2002).
[CrossRef]

2000 (1)

P. Wang, J. M. Dawes, P. Dekker, and J. A. Piper, Opt. Commun. 174, 467 (2000).
[CrossRef]

1999 (3)

D. Jaque, J. Capmany, and J. García Solé, Appl. Phys. Lett. 74, 1788 (1999).
[CrossRef]

G. J. Spühler, L. Gallmann, R. Fluck, G. Zhang, L. R. Brovelli, C. Harder, P. Laporta, and U. Keller, Electron. Lett. 35, 567 (1999).
[CrossRef]

C. Hönniger, R. Paschotta, F. Morier-Genoud, M. Moser, and U. Keller, J. Opt. Soc. Am. B 16, 46 (1999).
[CrossRef]

1996 (1)

U. Keller, K. J. Weingarten, F. X. Kartner, D. Kopf, B. Braun, I. D. Jung, R. Fluck, C. Honninger, N. Matuschek, and J. Aus der Au, IEEE J. Sel. Top. Quantum Electron. 2, 435 (1996).
[CrossRef]

1994 (1)

T. Zhao, Z. Luo, Y. Huang, M. W. Qio, and G. Chen, Opt. Commun. 109, 115 (1994).
[CrossRef]

Appl. Phys. B (2)

G. J. Spühler, K. J. Weingarten, R. Grange, L. Krainer, M. Haiml, V. Liverini, M. Golling, S. Schön, and U. Keller, Appl. Phys. B 81, 27 (2005).
[CrossRef]

B. Denker, B. Galagan, L. Ivleva, V. Osiko, S. Sverchkov, I. Voronina, J. E. Hellstrom, G. Karlsson, and F. Laurell, Appl. Phys. B 79, 577 (2004).
[CrossRef]

Appl. Phys. Lett. (1)

D. Jaque, J. Capmany, and J. García Solé, Appl. Phys. Lett. 74, 1788 (1999).
[CrossRef]

Electron. Lett. (3)

A. Rutz, R. Grange, V. Liverini, M. Haiml, S. Schön, and U. Keller, Electron. Lett. 41, 321 (2005).
[CrossRef]

G. J. Spühler, L. Gallmann, R. Fluck, G. Zhang, L. R. Brovelli, C. Harder, P. Laporta, and U. Keller, Electron. Lett. 35, 567 (1999).
[CrossRef]

C. S. Zeller, L. Krainer, G. J. Spühler, R. Paschotta, M. Colling, D. Ebling, K. J. Weingarten, and U. Keller, Electron. Lett. 40, 875 (2004).
[CrossRef]

IEEE J. Sel. Top. Quantum Electron. (1)

U. Keller, K. J. Weingarten, F. X. Kartner, D. Kopf, B. Braun, I. D. Jung, R. Fluck, C. Honninger, N. Matuschek, and J. Aus der Au, IEEE J. Sel. Top. Quantum Electron. 2, 435 (1996).
[CrossRef]

IEEE Photon. Technol. Lett. (1)

P. Burns, J. Dawes, P. Dekker, J. Piper, H. Jiang, and J. Wang, IEEE Photon. Technol. Lett. 14, 1677 (2002).
[CrossRef]

J. Cryst. Growth (1)

W. You, Y. Lin, Y. Chen, Z. Luo, and Y. Huang, J. Cryst. Growth 270, 481 (2004).
[CrossRef]

J. Opt. Soc. Am. B (2)

Opt. Commun. (2)

T. Zhao, Z. Luo, Y. Huang, M. W. Qio, and G. Chen, Opt. Commun. 109, 115 (1994).
[CrossRef]

P. Wang, J. M. Dawes, P. Dekker, and J. A. Piper, Opt. Commun. 174, 467 (2000).
[CrossRef]

Opt. Lett. (1)

Opt. Mater. (1)

N. I. Leonyuk, V. V. Maltsev, E. A. Volkova, O. V. Pilipenko, E. V. Koporulina, V. E. Kisel, N. A. Tolstik, S. V. Kurilchik, and N. V. Kuleshov, Opt. Mater. 30, 161 (2007).
[CrossRef]

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Figures (4)

Fig. 1
Fig. 1

Schematic of passively mode-locked Er,Yb:YAB laser. TLD, tapered laser diode ( P out = 3 W at 980 nm ); AL, aspherical lens ( f = 15 mm ) ; Telescope, two cylindrical lenses ( f 1 = 7.7 mm , f 2 = 100 mm ); FL, focusing lens ( f = 80 mm ) ; M1 and M2, folding mirrors ( r 1 = 100 mm , r 2 = 75 mm ); FS, fused silica prism; OC, output coupler ( T = 0.5 % , 1 % , 2 % , 5 % ) .

Fig. 2
Fig. 2

Reflectivity curves of InGaAsN SESAMs having two- (dark curve) and six- (gray curve) quantum-well layers (left axis) and tunability range of cw Er,Yb:YAB laser (right axis).

Fig. 3
Fig. 3

Intensity autocorrelation trace of the mode-locked pulse. Inset, corresponding optical spectrum (duration–bandwidth product 0.32).

Fig. 4
Fig. 4

RF spectrum at fundamental repetition rates. Inset, resolution bandwidth (Res. BW) 100 kHz and span 600 MHz .

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