Abstract

We present an agile optically controlled switch or modulator of terahertz (THz) radiation. The element is based on a one-dimensional photonic crystal with a GaAs wafer inserted in the middle as a defect layer. The THz electric field is enhanced in the photonic structure at the surfaces of the GaAs wafer. Excitation of the front GaAs surface by ultrashort 810nm laser pulses then leads to an efficient modulation of the THz beam even at low photocarrier concentrations (1016cm3). The response time of the element to pulsed photoexcitation is about 130ps.

© 2007 Optical Society of America

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