Abstract

A silicon (Si) nanowire grid ultraviolet (UV) transmission polarizer has been fabricated, and its performance was measured over the visible to deep UV range. A cylinder-forming polystyrene-b-poly(hexylmethacrylate) diblock copolymer was coated onto an amorphous Si layer supported on a fused silica substrate, then shear aligned and employed as a mask for reactive-ion etching, resulting in a Si grid of 33nm period and multi-centimeter-squared area. Due to the high plasma frequency and UV reflectance of the deposited Si, this nanowire grid was able to polarize light down into the deep UV, including 193nm.

© 2007 Optical Society of America

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