Abstract

A new semiconductor photodetector design is reported. The PIN active area of the photodetector is fabricated on a sloping sidewall of a mesa structure. The photodetector is referred to as an edge-view photodetector (EVPD) and simplifies the integration of optical circuits by direct end coupling, eliminating the need for 45° mirrors. The EVPD geometry can reduce the cost of optical interconnects by simplifying the fabrication process and making possible automatic alignment between photodetectors and waveguides or optical fibers. The EVPD fabrication process and initial measurement results are presented. The main processing steps include deep anisotropic chemical etching, material growth, and lithography on a 3-D surface.

© 2007 Optical Society of America

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