Abstract

A cw Pr3+:LiYF4 laser at 639nm pumped by a high-power GaN laser diode (444nm) is demonstrated. The highest laser power of 112mW is achieved with an optical–optical conversion efficiency of 33.5%. Characteristics of this laser at elevated temperatures are also investigated for practical applications such as a laser projector.

© 2007 Optical Society of America

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References

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2007 (1)

X. P. Hu, X. Wang, Z. Yan, H. X. Li, J. L. He, and S. N. Zhu, Appl. Phys. B 86, 265 (2007).
[CrossRef]

2006 (1)

2005 (1)

A. Richter, H. Scheife, E. Heumann, G. Huber, W. Seelert, and A. Diening, Electron. Lett. 41, 794 (2005).
[CrossRef]

2004 (1)

1998 (1)

A. A. Kaminskii, A. I. Lyashenko, N. P. Isaev, V. N. Karlov, V. L. Pavlovich, S. N. Bagayev, A. V. Butashin, and L. E. Li, Quantum Electron. 28, 187 (1998).
[CrossRef]

1996 (1)

1994 (3)

T. Danger, A. Bleckmann, and G. Huber, Appl. Phys. B 58, 413 (1994).
[CrossRef]

K. Itaya, H. Sugawara, and G. Hatakoshi, J. Cryst. Growth 138, 768 (1994).
[CrossRef]

T. Sandrock, T. Danger, E. Heumann, G. Huber, and B. H. T. Chai, Appl. Phys. B 58, 149 (1994).
[CrossRef]

1993 (1)

M. Malinowski, M. F. Joubert, and B. Jacquier, Phys. Status Solidi A 140, K49 (1993).
[CrossRef]

1991 (1)

R. G. Smart, J. N. Carter, A. C. Tropper, D. C. Hanna, S. T. Davey, S. F. Carter, and D. Szebesta, Opt. Commun. 86, 333 (1991).
[CrossRef]

Appl. Phys. B (3)

X. P. Hu, X. Wang, Z. Yan, H. X. Li, J. L. He, and S. N. Zhu, Appl. Phys. B 86, 265 (2007).
[CrossRef]

T. Sandrock, T. Danger, E. Heumann, G. Huber, and B. H. T. Chai, Appl. Phys. B 58, 149 (1994).
[CrossRef]

T. Danger, A. Bleckmann, and G. Huber, Appl. Phys. B 58, 413 (1994).
[CrossRef]

Electron. Lett. (1)

A. Richter, H. Scheife, E. Heumann, G. Huber, W. Seelert, and A. Diening, Electron. Lett. 41, 794 (2005).
[CrossRef]

J. Cryst. Growth (1)

K. Itaya, H. Sugawara, and G. Hatakoshi, J. Cryst. Growth 138, 768 (1994).
[CrossRef]

Opt. Commun. (1)

R. G. Smart, J. N. Carter, A. C. Tropper, D. C. Hanna, S. T. Davey, S. F. Carter, and D. Szebesta, Opt. Commun. 86, 333 (1991).
[CrossRef]

Opt. Express (1)

Opt. Lett. (2)

Phys. Status Solidi A (1)

M. Malinowski, M. F. Joubert, and B. Jacquier, Phys. Status Solidi A 140, K49 (1993).
[CrossRef]

Quantum Electron. (1)

A. A. Kaminskii, A. I. Lyashenko, N. P. Isaev, V. N. Karlov, V. L. Pavlovich, S. N. Bagayev, A. V. Butashin, and L. E. Li, Quantum Electron. 28, 187 (1998).
[CrossRef]

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Figures (5)

Fig. 1
Fig. 1

Experimental setup of the GaN-laser-diode-pumped Pr 3 + : Li Y F 4 laser.

Fig. 2
Fig. 2

Plots of the output power at 639 nm as a function of absorbed pump power for various output couplers.

Fig. 3
Fig. 3

Output power at 639 nm as a function of absorbed pump power for various crystal temperatures with a 96% output coupler.

Fig. 4
Fig. 4

(a) π-polarization and (b) σ-polarization emission spectra of the Pr 3 + : Li Y F 4 crystal pumped at the GaN laser diode at 300 and 380 K .

Fig. 5
Fig. 5

P 0 3 manifold emission lifetime of the Pr 3 + : Li Y F 4 at various temperatures.

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