Abstract

We demonstrate high-speed all-optical switching via vertical excitation of an electron–hole plasma in an oxygen-ion implanted silicon-on-insulator microring resonator. Based on the plasma dispersion effect the spectral response of the device is rapidly modulated by photoinjection and subsequent recombination of charge carriers at artificially introduced fast recombination centers. At an implantation dose of 1×1012cm2 the carrier lifetime is reduced to 55ps, which facilitates optical switching of signal light in the 1.55μm wavelength range at modulation speeds larger than 5Gbitss.

© 2007 Optical Society of America

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