Abstract

We study theoretically the properties of a thin film of a semiconductor embedded in the interface of two kinds of single-negative materials. At some frequencies the structure with suitable size is equivalent to an effective (near) zero-index medium. The coupling of exciton resonance in the semiconductor and the interface mode in a zero-index medium leads to Rabi splitting. Compared with Rabi splitting observed in cavities, the splitting modes in zero-index media are robust against the scaling change of the length and direction of incident wave.

© 2007 Optical Society of America

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