Abstract

We demonstrate what is believed to be the first use of AlGaInAs quantum wells (QWs) as a saturable absorber in the Q switching of a high-power diode-pumped Nd-doped 1.06μm laser. The barrier layers are designed to locate the QW groups in the region of the nodes of the lasing standing wave to avoid damage. With an incident pump power of 13.5W, an average output power of 3.5W with a Q-switched pulse width of 0.9ns at a pulse repetition rate of 110kHz was obtained.

© 2007 Optical Society of America

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