Abstract

Terahertz detection using the free-carrier absorption requires a small internal work function of the order of a few millielectron volts. A threshold frequency of 3.2THz (93μm or 13meV work function) is demonstrated by using a 1×1018cm3 Si-doped GaAs emitter and an undoped Al0.04Ga0.96As barrier structure. The peak responsivity of 6.5AW, detectivity of 5.5×108 Jones, and quantum efficiency of 19% were obtained at 7.1THz under a bias field of 0.7kVcm at 6K, while the detector spectral response range spans from 3.2to30THz.

© 2007 Optical Society of America

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