Abstract

We investigate for the first time, to our knowledge, the enhancement of the stimulated Raman scattering in slow-light silicon-on-insulator (SOI) photonic crystal line defect waveguides. By applying the Bloch–Floquet formalism to the guided modes in a planar photonic crystal, we develop a formalism that relates the intensity of the downshifted Stokes signal to the pump intensity and the modal group velocities. The formalism is then applied to two prospective schemes for enhanced stimulated Raman generation in slow-light photonic crystal waveguides. The results demonstrate a maximum factor of 104 (66,000) enhancement with respect to SOI channel waveguides.

© 2006 Optical Society of America

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