Abstract

A free-space silicon one-dimensional photonic bandgap optical filter is designed and fabricated. A two-stage (110) wafer etching process is employed to form the extremely vertical, smooth, and high-aspect-ratio features that are essential for good optical properties. The ⟨111⟩ oriented planes of the wafer form <0.01° off-vertical trenches that make up the Fabry–Perot filter. A simulation model is presented that analyzes the effect of verticality and predicts the measured spectrum well.

© 2006 Optical Society of America

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