Abstract

Electroluminescence associated with impact excitation or ionization of deep Cr2+ impurity centers in bulk ZnSe is reported. A broad signal of mid-infrared luminescence between 2 and 3μm is observed once the biased bulk ZnSe device runs into a nonlinear conduction regime. Optical powers in the nanowatt range have been measured at room temperature. The different mechanisms involved in this intracenter infrared light emission are discussed.

© 2006 Optical Society of America

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