Abstract

The effect of focal spot size on in-band 13.5nm extreme ultraviolet (EUV) emission from laser-produced Sn plasmas was investigated for an EUV lithography light source. Almost constant in-band conversion efficiency from laser to 13.5nm EUV light was noted with focal spot sizes from 60to500μm. This effect may be explained by the opacity of Sn plasmas. Optical interferometry showed that the EUV emission must pass through a longer plasma with higher density when the focal spot is large, and strong reabsorption of EUV light was confirmed by a dip located at 13.5nm in the spectrum.

© 2006 Optical Society of America

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