Abstract

The second-order nonlinear profile induced within thermally poled Infrasil silica samples is characterized as a function of the duration of the poling process. For poling durations shorter than 5 min the spatial distribution of the χ(2) susceptibility exhibits a triangular shape. This observation, as well as the maximum value of the electric field recorded during poling (1.9×109Vm), is in excellent agreement with charge migration models that involve a single charge carrier. It is shown that for higher poling durations the nonlinear profiles tend to flatten; in that case the charge injection mechanisms cannot be neglected. For another point of view, the experimental method introduced herein has allowed us to determine the mobility of the rapid charge carrier involved in the poling process: μ=1.5×1015m2V1s1 at 250°C.

© 2005 Optical Society of America

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