Abstract

Passive mode locking of an optically pumped, InP-based, 1550nm semiconductor disk laser by using a GaInNAs saturable absorber mirror is demonstrated. To reduce material heating and enable high-power operation, a 50μm thick diamond heat spreader is bonded to the surface of the gain chip. The laser operates at a repetition frequency of 2.97GHz and emits near-transform-limited 3.2ps pulses with an average output power of 120mW.

© 2005 Optical Society of America

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