Abstract

We report significant improvement in terahertz (THz) power and efficiency using photoconductive sources by use of a spatially extended line source excitation and the trap enhanced field effect that occurs in sources made on semi-insulating GaAs. The combination of high electric fields and reduced screening effects allows 10μW of THz power to be generated with 14mW of absorbed optical power, demonstrating nearly 0.1% optical-to-THz conversion efficiency.

© 2005 Optical Society of America

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