Abstract

An optically pumped, high-power, single-frequency semiconductor disk laser is demonstrated. A thin (50μm) diamond bonded to an InGaAsP gain chip provides the combined functions of heat removal and spectral filtering, thus eliminating the need for the additional intracavity etalons that are usually employed for single-frequency operation. In a short cavity (4mm) configuration we obtained a maximum output power of 470mW at 0°C and 170mW at 20°C in a near-diffraction-limited beam (M2<1.2). The emission wavelength was 1549nm and the linewidth was less than 200MHz.

© 2005 Optical Society of America

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